2N2221

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and at T c as e ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and Storage Temperature Junction Temperature 2 N22 19 2 N22 22 2 N22 19 2 N22 22 Value 60 30 5 0.8 0.8 0.5 3 1.8 – 65 to 200 175 Unit V V V A W W W W °C °C 1/5 T st g Tj January 1989 2N2218-2N2219-2N2221-2N2222 THERMAL DATA 2 N22 18 2 N22 19 R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 °C/W 187.5 °C/W 2N 222 1 2N 222 2 83.3 °C/W 300 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Col...