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2N2221 Dataheets PDF



Part Number 2N2221
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Silicon Planar Epitaxial NPN transistor
Datasheet 2N2221 Datasheet2N2221 Datasheet (PDF)

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/.

  2N2221   2N2221



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2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and at T c as e ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and Storage Temperature Junction Temperature 2 N22 19 2 N22 22 2 N22 19 2 N22 22 Value 60 30 5 0.8 0.8 0.5 3 1.8 – 65 to 200 175 Unit V V V A W W W W °C °C 1/5 T st g Tj January 1989 2N2218-2N2219-2N2221-2N2222 THERMAL DATA 2 N22 18 2 N22 19 R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 °C/W 187.5 °C/W 2N 222 1 2N 222 2 83.3 °C/W 300 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Colllector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 50 V V CB = 50 V VE B = 3 V I C = 10 µA I C = 10 mA I E = 10 µA I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA T am b = 150 °C Min. Typ. Max. 10 10 10 Unit nA µA nA V V V 60 30 5 0.4 1.6 1.3 2.6 20 25 35 40 20 20 35 50 75 100 30 50 250 8 60 V (BR)CE O * V ( BR) V CE VB E EBO (s at )* V V V V (s at )* h F E* for 2N 221 8 and 2N 22 21 I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V for 2N 221 9 and 2N 22 22 I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 20 mA f = 100 MHz IE = 0 f = 100 kHz I C = 20 mA f = 300 MHz V CE = 20 V V CB = 10 V V CE = 20 V 120 300 fT C CBO R e (h ie ) Transition Frequency Collector-base Capacitance Real Part of Input Impedance MHz pF Ω * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/5 2N2218-2N2219-2N2221-2N2222 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 3/5 2N2218-2N2219-2N222.


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