2N2219A

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL LEVELS JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2218A; L 2N2219 2N2219A; L Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 60 75 Emitter-Base Voltage VEBO 5.0 6.0 Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Operating & Storage Junction Temp. Range IC PT Top, Tstg 800 0.8 3.0 -55 to +200 Unit Vdc Vdc Vdc mA W W °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Thermal Resistance, Junction-to-Case RθJC Note: (1) Derate linearly 4.6mW/°C above TA > +25°C (2) Derate linearly 17.0mW/°C above TC > +25°C Value 59 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IE = 10mAdc 2N2218; 2N2219 2N2218A; 2N2219A; L V(BR)CEO 30 50 Vdc Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc VEB = 4.0Vdc Collector-Base Cutoff Current VCE = 30Vdc VCE = 50Vdc 2N2218; 2N2219 2N2218A; 2N2219A; L All Types 2N2218; ...