TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893 2N1893S
Quali...
TECHNICAL DATA
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893 2N1893S
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol All Devices
Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current
Total Power Dissipation
@ TA = +250C (1) @ TC = +250C (2)
VCEO VCBO VEBO VCER
IC
PT
80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0
Operating & Storage Junction Temperature Range
TJ, Tsrg
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
RθJC
97
58
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 30 mAdc
V(BR)CEO
Collector-Emitter B...