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2N1131L

Part Number	2N1131L
Manufacturer	Microsemi
Description	LOW POWER PNP SILICON TRANSISTOR
Published	May 28, 2005
Detailed Description	TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qu...
Datasheet	2N1131L PDF File

Overview

TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.
0 600 0.
6 2.
0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.
4 mW/0C for TA ≥ +250C 2) Derate linearly 11.
4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)...

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