29F002

M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits 32 s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend 1 PDIP32 (P) s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby VCC s Figure 1. Logic Diagram s s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – M29F002BT Device Code: B0h – M29F002BNT Device Code: B0h – M29F002BB Device Code: 34h G RP A0-A17 W E 18 8 DQ0-DQ7 s s M29F002BT M29F002BB M29F002BNT VSS AI02957 October 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/22 M29F002BT, M29F002BB, M29F002BNT Figure 2A. PLCC Connections Figure 2B. TSOP Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29F002BT M29F002BB A11 A9 A8 A13 A14 A17 W VCC RP A16...