8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50...
Description
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT
1 1 42 42
s s
s s
LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 50µA
FDIP42W (F)
PDIP42 (B)
s s s
PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B2h
PLCC44 (K)
1 44
SO44 (M)
DESCRIPTION The M27C800 is an 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 1 Mwords of 8 bit or 512 Kwords of 16 bit. The pin-out is compatible with the most common 8 Mbit Mask ROM. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C800 is offered in PDIP42, PLCC44 and SO44 packages.
Figure 1. Logic Diagram
VCC
19 A0-A18 15
Q15A–1
Q0-Q14 E G BYTEVPP M27C800
VSS
AI01593
January 2000
1/17
M27C800
Figure 2A. DIP Connections
A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 42 1 41 2 40 3 39 4 38 5 37 6 36 7 35 8 34 9 33 10 M27C800 3...
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