STP40N03L-20

STP40N03L-20 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P40N03L-20 s s s s s s s V DSS 30 V R DS(on) < 0.02 Ω ID 40 A TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P to t Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dV/dt( 1 ) T st g Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o Value 30 30 ± 15 40 28 160 90 0.6 6 -65 to 175 175 Unit V V V A A A W W/ C V/ns o o o C C ( ) Pulse width limited by safe operating area March 1996 1/7 STP40N03L-20 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1.66 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or No...