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MTP23P06V

Part Number	MTP23P06V
Manufacturer	Motorola
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM
Published	May 23, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transisto...
Datasheet	MTP23P06V PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are cr...

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