MTP23P06V Datasheet

MTP23P06V TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell densi.

Features

of TMOS V
• On
  –resistance Area Product about One
  –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
  –FET Predecessors Features Common to TMOS V and TMOS E
  –FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
  –FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –to
  –Source Voltage — Continuous Gate
  –to
  –Source Voltage — Non
  –repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Dra.