MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell densi.
of TMOS V
• On
–resistance Area Product about One
–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
–FET Predecessors Features Common to TMOS V and TMOS E
–FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
–FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain
–to
–Source Voltage Drain
–to
–Gate Voltage (RGS = 1.0 MΩ) Gate
–to
–Source Voltage — Continuous Gate
–to
–Source Voltage — Non
–repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Dra.
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