SDB20S30

Preliminary data Silicon Carbide Schottky Diode
Revolutionary semiconductor SDP20S30 SDB20S30 material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on Product Summary VRRM Qc IF P-TO220-3.SMD 300 23 2x10 P-TO220-3-1. V nC A the switching behavior
No forward recovery Type SDP20S30 SDB20S30 Package P-TO220-3-1. Ordering Code Q67040-S4419 Marking D20S30 S20S30 1 2 3 P-TO220-3.SMD Q67040-S4374 Maximum Ratings,at Tj = 25 °C, unless otherwise specified (per leg) Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp =10ms Symbol IF I FRMS Value 10 14 36 45 100 6.5 300 300 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 I FRM I FMAX i2dt Non repetitive peak forward current tp =10µs, TC=25°C i 2 t value, TC=25°C, tp =10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, single diode mode , TC =25°C Operating and storage temperature A²s V W °C VRRM VRSM Ptot T j , Tstg Page 1 2001-09-07 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case (per leg) SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1) SDP20S30 SDB20S30 Values min. typ. 35 max. 2.3 62 K/W Unit Symbol RthJC RthJA - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified (per leg) Pa...