BS62LV8006

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 1M X 8 bit „ GENERAL DESCRIPTION BS62LV8006 Vcc operation voltage : 4.5V ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 75mA (@55ns) operating current I -grade: 76mA (@55ns) operating current C-grade: 60mA (@70ns) operating current I -grade: 61mA (@70ns) operating current 8.0uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options The BS62LV8006 is a high performance , very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 8.0uA at 5V/25oC and maximum access time of 55ns at 5.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1) , an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BS62LV8006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV8006 is available in 48B BGA and 44L TSOP2 packages. „ PRODUCT FAMILY PRODUCT FAMILY BS62LV8006EC BS62LV8006FC BS62LV8006EI BS62LV8006FI OPERATING TEMPERATURE +0 C to +70 C -40 O C to +85O C O ...