Very Low Power/Voltage CMOS SRAM 2M X 8 bit
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 2M X 8 bit
GENERAL DESCRIPTION
BS62LV1605
• Vcc operation voltage :...
Description
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 2M X 8 bit
GENERAL DESCRIPTION
BS62LV1605
Vcc operation voltage : 4.5V ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current C-grade: 90mA (@70ns) operating current I -grade: 92mA (@70ns) operating current 15uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options
The BS62LV1605 is a high performance , very low power CMOS Static Random Access Memory organized as 2048K words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 15uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1) , an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BS62LV1605 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1605 is available in 48B BGA and 44L TSOP2 packages.
PRODUCT FAMILY
PRODUCT FAMILY BS62LV1605EC BS62LV1605FC BS62LV1605EI BS62LV1605FI OPERATING TEMPERATURE +0 C to +70 C -40 O C to +85O C
O O
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