Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.912 Ω (Typ.)
SFS9510
BVDSS = -100 V RDS(on) = 1.2 Ω ID = -2.5 A
TO-220F
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