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SFR9120 Dataheets PDF



Part Number SFR9120
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFR9120 DatasheetSFR9120 Datasheet (PDF)

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) SFR/U9120 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -4.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current.

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) SFR/U9120 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -4.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -4.9 -3.4 1 O Units V A A V mJ A mJ V/ns W W W/ C o -20 ±30 144 -4.9 3.2 -6.5 2.5 32 0.26 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.91 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C SFR/U9120 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.1 ------3.4 425 90 31 11 21 34 18 16 3.1 6.3 ---4.0 -100 100 -10 -100 0.6 -550 135 45 30 50 80 45 20 --nC ns pF µA Ω S V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-100V VDS=-80V,TC=125 C VGS=-10V,ID=-2.5A VDS=-40V,ID=-2.5A 4 O 4 O o V/ C ID=-250µA V nA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V,ID=-6A, RG=18 Ω See Fig 13 VDS=-80V,VGS=-10V, ID=-6A See Fig 6 & Fig 12 4O 5 O 4O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------105 0.4 -4.9 -20 -3.8 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-4.9A,VGS=0V TJ=25 C,IF=-6A diF/dt=100A/µs 4 O o o O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 C O L=9.0mH, IAS=-4.9A, VDD=-25V, RG=27Ω*, Starting TJ =25 o 3 _ -6A, di/dt < _ 350A/µs, VDD < _ BVDSS , Starting TJ =25 C O ISD < 4 Pulse Test : Pulse Width = 250µs, Duty Cycle< _ 2% O 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS Top : 1 1 0 -1 5V -1 0V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 1 1 0 SFR/U9120 Fig 2. Transfer Characteristics -ID , Drain Current [A] -ID , Drain Current [A] 0 1 0 0 1 0 1 5 0 oC 2 5 oC @N o t e s: 1 .V GS = 0 V 2 .V 4 0V DS = 3 .2 5 0 µs P u l s eT e s t 6 8 1 0 @N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T 5 oC C =2 -1 1 0 -1 1 0 0 1 0 1 1 0 -5 5 oC -1 1 0 2 4 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 2 . 5 Fig 4. Source-Drain Diode Forward Voltage -IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 2 . 0 1 1 0 1 . 5 V 1 0V GS = - 1 . 0 0 1 0 1 5 0 oC 2 5 oC @N o t e s: 1 .V GS = 0 V 2 .2 5 0 µs P u l s eT e s t 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 . 5 V 2 0V GS = 0 . 0 0 4 8 1 2 1 6 @N o t e:T 5 oC J =2 2 0 2 4 -1 1 0 0 . 5 1 . 0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 8 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd 6 0 0 Fig 6. Gate Charge vs. Gate-Source Voltage 1 0 C iss 4 0 0 C oss @N o t e s: 1 .V GS = 0 V 2 .f=1M H z -VGS , Gate-Source Voltage [V] V 2 0V DS = V 5 0V DS = V 8 0V DS = - Capacitance [pF] 5 2 0 0 C rss @N o t e s:I 6 . 0A D = 0 0 3 6 9 1 2 1 5 1 8 00 1 0 1 1 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SFR/U9120 Fig 7. Breakdown Voltage vs. Temperature 1 . 2 2 . 5 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BVDSS , (Normalized) Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 2 . 0 1 . 1 1 . 5 1 . 0 1 . 0 @N o t e s: 1 0V 1 .V GS = 2 .I 3 . 0A D =5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 0 . 9 @N o t e s: 1 .V GS = 0 V 2 .I 2 5 0.


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