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SFM13 Dataheets PDF



Part Number SFM13
Manufacturers Formosa MS
Logo Formosa MS
Description Super fast recovery type
Datasheet SFM13 DatasheetSFM13 Datasheet (PDF)

Chip Silicon Rectifier SFM11 THRU SFM16 Super fast recovery type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded.

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Chip Silicon Rectifier SFM11 THRU SFM16 Super fast recovery type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE C DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 100 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 32 10 C / w pF +150 o C SYMBOLS MARKING CODE S11 S12 S13 S14 S15 S16 V RRM (V) *1 V RMS (V) 35 70 105 140 210 280 *2 VR *3 VF *4 T RR *5 Operating temperature ( o C) (V) 50 100 150 200 300 400 (V) (nS) SFM11 SFM12 SFM13 SFM14 SFM15 SFM16 50 100 150 200 300 400 *1 Repetitive peak reverse voltage 0.95 35 -55 to +150 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM11 THRU SFM16) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 4 SF M1 1~ SF M1 INSTANTANEOUS FORWARD CURRENT,(A) 1.0 .1 Tj=25 C Pulse Width 300us 1% Duty Cycle SF M 15 ~S FM 16 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 24 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 (+) 25Vdc (approx.) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. ( ) PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 60 50 40 30 20 10 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) .


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