Advanced Power MOSFET
FEATURES
s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150 C Operating Temperature s Lower Leakage Current : 10 µA (Max.) @ VDS = 150V s Lower RDS(ON) : 0.064 Ω (Typ.)
o
SFH154
BVDSS = 150 V RDS(on) = 0.075 Ω ID = 34 A
TO-3P
1 2 3
1.Gate ...
