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SF8GZ47 Dataheets PDF



Part Number SF8GZ47
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TOSHIBA THYRISITOR SILICON PLANAR TYPE
Datasheet SF8GZ47 DatasheetSF8GZ47 Datasheet (PDF)

SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage l Average On−State Current l Isolation Voltage : VDRM = 400, 600V : VRRM = 400, 600V : IT (AV) = 8A : VIsol = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak6 Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF8GZ47 SF8JZ47 SF8GZ47.

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SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage l Average On−State Current l Isolation Voltage : VDRM = 400, 600V : VRRM = 400, 600V : IT (AV) = 8A : VIsol = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak6 Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF8GZ47 SF8JZ47 SF8GZ47 SF8JZ47 VRSM SYMBOL VDRM VRRM RATING 400 600 500 720 8 12.6 120 (50 Hz) 132 (60 Hz) 72 100 5 0.5 10 −5 2 −40~125 −40~125 1500 V V UNIT Average On−State Current (Half Sine Waveform Tc = 72°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) 2 IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VISOL 2 A A A A s A / µs W W V V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1B Note 1: di / dt test condition, VDRM = 0.5 × Rated, ITM ≤ 25A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 1 2001-07-13 SF8GZ47,SF8JZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j−c) TEST CONDITION VDRM = VRRM = Rated ITM = 25 A VD = 6 V, RL = 10 Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated, Tc = 125°C Exponential Rise VD = 6 V, ITM = 1 A VD = 6 V, f = 50Hz, tgw = 50 µs, iG = 30 mA Junction to Case MIN ― ― ― ― 0.2 ― ― ― ― TYP. ― ― ― ― ― 50 ― ― ― MAX 10 1.5 1.0 10 ― ― 40 50 3.7 UNIT µA V V mA V V / µs mA mA °C / W MARKING *1 TYPE F8GZ47 F8JZ47 TYPE NAME SF8GZ47 SF8JZ47 *2 Example 8A:January 1998 8B:Febrary 1998 8L:December 1998 2 2001-07-13 SF8GZ47,SF8JZ47 3 2001-07-13 SF8GZ47,SF8JZ47 4 2001-07-13 SF8GZ47,SF8JZ47 5 2001-07-13 SF8GZ47,SF8JZ47 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2001-07-13 .


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