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SEMB4 Dataheets PDF



Part Number SEMB4
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description PNP Silicon Digital Transistor Array Preliminary data
Datasheet SEMB4 DatasheetSEMB4 Datasheet (PDF)

SEMB4 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R1 TR1 R1 TR2 1 E1 2 B1 3 C2 EHA07266 Type SEMB4 Maximum Ratings Parameter Marking WW Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value Unit Collector-.

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SEMB4 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R1 TR1 R1 TR2 1 E1 2 B1 3 C2 EHA07266 Type SEMB4 Maximum Ratings Parameter Marking WW Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value Unit Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance 50 50 5 20 100 250 150 -65 ... 150 V mA mW °C Junction - soldering point1) RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-01-2004 SEMB4 Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 1.2 fT 150 - Unit max. 100 630 0.3 1 1.1 13 kΩ MHz pF typ. 10 V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCEsat Vi(off) Vi(on) R1 50 50 5 120 0.4 0.5 7 V nA V 1) Pulse test: t < 300µs; D < 2% 2 Mar-01-2004 SEMB4 DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 1 10 2 IC 10 0 10 1 -1 10 0 1 10 10 mA 10 2 10 -1 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 VCE = 5V (common emitter configuration) 10 2 mA mA 10 1 10 1 IC IC 10 0 10 -1 -1 10 0 1 10 0 10 -1 10 -2 10 10 V 10 2 10 -3 0 1 2 3 4 V 6 Vi(on) Vi(off) 3 Mar-01-2004 SEMB4 Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/ PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Mar-01-2004 .


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