Transimpedance Amplifier
SE1020W
1.25 Gb/s Transimpedance Amplifier Product Preview
Applications
Gigabit-Ethernet systems, test equipment and mo...
Description
SE1020W
1.25 Gb/s Transimpedance Amplifier Product Preview
Applications
Gigabit-Ethernet systems, test equipment and modules OC-24 fibre optic modules and line termination Fibre Channel optical systems
Product Description
SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. SiGe Semiconductor’s SE1020W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features differential outputs and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram is shown after the functional description, on page 3.
Features
Single +3.3 V power supply Power dissipation = 110 mW (typ) Input noise current = 180 nA rms when used with a 0.7 pF detector Transimpedance gain = 4.0 kΩ into a 50 Ω load (differential) On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk Differential 50 Ω outputs Bandwidth (-3 dB) = 1.2 GHz Wide data rate range = 50 Mb/s to 1.25 Gb/s Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC) Minimal external components, supply decoupling only Operating junction temperature range = -40°C to +125°C
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