S DM4952
S amHop Microelectronics C orp.
March , 2003
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ...
S DM4952
S amHop Microelectronics C orp.
March , 2003
Dual P -C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) MAX
ID
-5.3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
50 @ V G S = -4.5V 75 @ V G S = -2.7V
R ugged and reliable. S urface Mount P ackage.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1
S2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 5.3 21 2.5 2 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W
1
S DM4952
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = -250uA V GS =-4.5V, ID= -2.9A V GS =-2.7V, ID = -1.5A V DS = -5V, V GS = -4.5V V DS = -15V, ID = - 4.9A
Min Typ C Max Unit
-20 -1 V uA 100 nA -0.7 V 50 m-ohm 75 m-ohm -20 13 1190 700 250 A S
PF PF PF
ON CHAR ACTE R IS TICS b
Gate ...
