S DG 8204
S amHop Microelectronics C orp. December , 2002
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P ...
S DG 8204
S amHop Microelectronics C orp. December , 2002
Dual N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
6A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
28 @ V G S = 4.0V 34 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage.
D2
8
S2
7
S2
6
G2
5
T S S OP
1
(T OP V IE W)
1 2 3 4
D1
S1
S1
G1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 8 6.0 35 1.7 1.5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 85 C /W
1
S DG 8204
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 8V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 6.0A V GS =2.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A
Min Typ C Max Unit
20 1 V uA 100 nA 0.7 28 34 20 17 720 320 90 V
m ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drai...
