INTEGRATED CIRCUITS
SA2410 2.45GHz RF power amplifier and T/R switch
Preliminary specification IC17 Data Handbook 1997 Sep 09
Philips Semiconductors
Philips Semiconductors
Preliminary specification
2.45GHz RF power amplifier and T/R switch
SA2410
DESCRIPTION
The SA2410 is a GaAs monolithic power amplifier with an integrated T/R switch designed to meet requirements for 802.11 (WLAN). The SA2410 uses an on–chip 4 GHz oscillator to generate the negative bias, thus eliminating the need for a negative supply. It operates from 3V to 5.5V and consumes 125 mA with an output power of 18.5 dB (typ). It is suitable for other 2.45 GHz ISM band applications.
PAIN GND GND GND GND GND GND 26 32 31 30 29 28 2 25 24 VD4 GND VD3 GND VGC1 VGC2 GND SWOUT1 1 23 2 3 4 5 6 7 8 9 VCTRL1 10 VSW 11 SWIN 12 GND 13 GND 14 V OSC 19 VCTRL2 16 SWOUT2 26 21 20 19 18 17 GND GND GND GND VGPA VNEG PAOUT GND V D2
FEATURES
• VCC=3V–5.5V • No negative bias needed • ICC=125mA (typ) @ 3.3V • POUT=18.5 dB(typ)
IM3<–30dBc IM5<–50dBc
• Gain=29dB (typ) • Attenuation range=16dB (typ) • LQFP–32 package
APPLICATIONS
SR01422
Figure 1. Pin Configuration
• 802.11 WLAN • 2.4–2.5 GHz ISM BAND
ORDERING INFORMATION
DESCRIPTION 32–Pin Plastic Thin Quad Flat Package TEMPERATURE RANGE –40° C+85°C ORDER CODE SA2410 DWG # SOT401–1
GENERAL SPECIFICATIONS
Symbol T VCC ICC Power Amplifier fRF IM3 IM5 Ton Toff Gain Pout Eff. ∆ Gt1 ∆ Gt2 ∆ Gr ∆ Gvd Frequency Range IM3 2 tones IM5 2 tones Transmit power on Xmit power down Small signal gain Output power Efficiency Gain variation with temp Gain variation with temp Ripple Gain variation with supply –40 to +85°C 0–70°C 2.45"0.05 GHz 3.3 volts"0.3 V IM3=30dBc IM5=50dBc
[email protected] volts 17.5 29 18.5 25 "3.5 "2.0 "1 0.5 Including neg. supply 2.4 30 50 2 2 2.5 GHz dBc dBc µs µs dB dBm % dB dB dB dB Supply V Supply I 3.3 volts Parameter Temperature Condition Min –40 3 125 Typ Max +85 5.5 Unit C V mA
1997 Sep 09
2
Philips Semiconductors
Preliminary specification
2.45GHz RF power amplifier and T/R switch
SA2410
Symbol ton Linear Gain Control Symbol VGC CGC GCR Symbol Ltx Lrx tsw ISOPA Zin Zout ISOSW
Parameter Power on time 4 GHz spur Parameter Gain control voltage Input C at gain pin Attenuation range Parameter Insertion loss Tx Insertion loss Rx Switch response time Isolation switch to PA Input impedance Output impedance Switch Isolation
Condition
Min 10
Typ
Max 100
Unit nS dBm
Negative voltage supply Xmit Mode Condition Min TBD Typ TBD TBD 16 Condition Min Typ 1.3 1.3 30 50 50 17 19 Max 2 2 400 Max
Unit Volt pF dB Unit dB dB nS dB Ω Ω dB
Transmit/receive switch
Attenuator
PA
PAIN
PAOUT
VGPA VNEG
Negative Power Supply
SWOUT1 Switch
SWOUT2 SWIN
SR01423
Figure 2. Block Diagram
1997 Sep 09
3
Philips Semiconductors
Preliminary specification
2.45GHz RF power amplifier and T/R switch
SA2410
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
1997 Sep 09
4
Philips Semiconductors
Preliminary specification
2.45GHz RF power amplifier and T/R switch
SA2410
NOTES
1997 Sep 09
5
Philips Semiconductors
Preliminary specification
2.45GHz RF power amplifier and T/R switch
SA2410
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed .