Document
S952T/S952TR/S952TRW
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage.
AGC RF in C block C block G2 G1 S D RF out C block
94 9296
RFC VDD
Features
D Easy Gate 1 switch-off with PNP switching transistors inside PLL
D High AGC-range with less steep slope D Integrated gate protection diodes
2 1
D D D D
Low noise figure High gain Improved cross modulation at gain reduction SMD package
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
S952T Marking: 952 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S952TR Marking: 52R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S952TRW Marking: W95 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85062 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (6)
S952T/S952TR/S952TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VG1S = 0 ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 9 V, VG2S = 4 V, RG1 = 390 kW VDS = VRG1 = 9 V, VG2S = 4 V, ID = 100 mA VDS = VRG1 = 9 V, RG1 = 390 kW, ID = 100 mA Symbol ±V(BR)DSS ±V(BR)G1SS ±V(BR)G2SS +IG1SS ±IG2SS IDSO VG1S(OFF) VG2S(OFF) 7 0.4 1.0 10 Min 15 7 7 Typ Max Unit V 10 10 20 20 14 1.2 V V nA nA mA V V
Remark on improving intermodulation behavior:
By setting RG1 = 300 kW instead of 390 kW, typical value of IDSO will raise up to about 15 mA and improved intermodulation behavior will be performed.
www.vishay.de • FaxBack +1-408-970-5600 2 (6)
Document Number 85062 Rev. 3, 20-Jan-99
S952T/S952TR/S952TRW
Vishay Telefunken Electrical AC Characteristics
VDS = 9 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol Min y21s 20 Cissg1 Crss Coss Gps Gps 16.5 DGps 40 F F Typ 24 2.1 20 0.9 26 20 1 1.3 Max Unit 28 mS 2.5 pF fF pF dB dB dB dB dB
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 9 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Document Number 85062 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 3 (6)
S952T/S952TR/S952TRW
Vishay Telefunken Dimensions of S952T in mm
96 12240
Dimensions of S952TR in mm
96 12239
www.vishay.de • FaxBack +1-408-970-5600 4 (6)
Document Number 85062 Rev. 3, 20-Jan-99
S952T/S952TR/S952TRW
Vishay Telefunken Dimensions of S952TRW in mm
96 12238
Document Number 85062 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 5 (6)
S952T/S952TR/S952TRW
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectivel.