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S952TRW Dataheets PDF



Part Number S952TRW
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage
Datasheet S952TRW DatasheetS952TRW Datasheet (PDF)

S952T/S952TR/S952TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C block 94 9296 RFC VDD Features D Easy Gate 1 switch-off with PNP switching transistors inside PLL D High AGC-range with less steep slope D Integrated.

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S952T/S952TR/S952TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C block 94 9296 RFC VDD Features D Easy Gate 1 switch-off with PNP switching transistors inside PLL D High AGC-range with less steep slope D Integrated gate protection diodes 2 1 D D D D Low noise figure High gain Improved cross modulation at gain reduction SMD package 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 S952T Marking: 952 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S952TR Marking: 52R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 S952TRW Marking: W95 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85062 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) S952T/S952TR/S952TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VG1S = 0 ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 9 V, VG2S = 4 V, RG1 = 390 kW VDS = VRG1 = 9 V, VG2S = 4 V, ID = 100 mA VDS = VRG1 = 9 V, RG1 = 390 kW, ID = 100 mA Symbol ±V(BR)DSS ±V(BR)G1SS ±V(BR)G2SS +IG1SS ±IG2SS IDSO VG1S(OFF) VG2S(OFF) 7 0.4 1.0 10 Min 15 7 7 Typ Max Unit V 10 10 20 20 14 1.2 V V nA nA mA V V Remark on improving intermodulation behavior: By setting RG1 = 300 kW instead of 390 kW, typical value of IDSO will raise up to about 15 mA and improved intermodulation behavior will be performed. www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 85062 Rev. 3, 20-Jan-99 S952T/S952TR/S952TRW Vishay Telefunken Electrical AC Characteristics VDS = 9 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol Min y21s 20 Cissg1 Crss Coss Gps Gps 16.5 DGps 40 F F Typ 24 2.1 20 0.9 26 20 1 1.3 Max Unit 28 mS 2.5 pF fF pF dB dB dB dB dB GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 9 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz Document Number 85062 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) S952T/S952TR/S952TRW Vishay Telefunken Dimensions of S952T in mm 96 12240 Dimensions of S952TR in mm 96 12239 www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 85062 Rev. 3, 20-Jan-99 S952T/S952TR/S952TRW Vishay Telefunken Dimensions of S952TRW in mm 96 12238 Document Number 85062 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) S952T/S952TR/S952TRW Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectivel.


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