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S949TRW

Vishay Telefunken

MOSMIC

S949T/S949TR/S949TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic In...


Vishay Telefunken

S949TRW

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Description
S949T/S949TR/S949TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 9 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C block 94 9296 RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at gain reduction D High AGC-range D SMD package 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 S949T Marking: 949 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S949TR Marking: 99R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 S949TRW Marking: W99 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85061 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (9) S949T/S949TR/S949TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Para...




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