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S9013

Fairchild Semiconductor

NPN Epitaxial Silicon Transistor

SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipatio...


Fairchild Semiconductor

S9013

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Description
SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC =100µA, IE =0 IC =1mA, IB =0 IE =100µA, IC =0 VCB =25V, IE =0 VEB =3V, IC =0 VCE =1V, IC =50mA VCE =1V, IC =500mA IC =500mA, IB =50mA IC =500mA, IB =50mA VCE =1V, IC =10mA 0.6 64 40 120 120 0.16 0.91 0.67 Min. 40 20 5 100 100 202 0.6 1.2 0.7 V V V Typ. Max. Units V V V nA nA hFE Classification Classification hFE1 D 64 ~ 91 E 78 ~ 112 F 96 ~ 135 G 112 ~ 166 H 144 ~ 202 ©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002 SS9013 Typical Characteristic...




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