RS8235

RSB12JS2 Diodes Bi Direction ESD Protection Diode (Silicon Epitaxial Planer) RSB12JS2 zApplication ESD Protection zFeatures 1) Low capacitance 2) Bi direction 3) Ultra small mold type (EMD6) zAbsolute maximum ratings (Ta=25°C) Power dissipation Junction temperature Storage temperature Pd Tj Tstg 150 mW/Total 150 °C −55 to 150 °C zElectrical characteristics (Ta=25°C) (∗Rating of per diode) Characteristic Zener Voltage Reverse current Junction capacitance Symbol Vz IR Ct Test Condition Iz= VR= 　f= VR= 5 mA 9V 1MHz 0V Standard MIN. MAX. 9.6 V 14.4 V 0.1µA 1 pF TYP. ∗ Please pay attention to static electricity when handling. ∗ Zener voltage (Vz) shall be measured at 40ms after loading current. 1/3 RSB12JS2 Diodes zExternal dimensions (Unit : mm) 1.0 ± 0.1 0.5 ± 0.05 0.5 (1) 0.5 (3) (2) (3) (2) (1) 0 to 0.1 (4) (5) (6) (4) (5) (6) 0.22 ±0.05 0.13 ± 0.05 (3)…N/C (6)…N/C 1.6 ± 0.1 zOthers Characteristic Equipment Composition IEC-61000-4-2 Charge discharge Capacitance Discharge resistance Repeat by 10 times No erroneous operation Contact In air ：　150 pF ： 330Ω Criterion ： ± 8 kV ： ± 15 kV 2/3 RSB12JS2 Diodes zRecommended mounting pad layout sizes OPEN (3) 0.5 0.25 0.15 (2) 0.5 (1) 0.4 0.45 0.3 (4) (5) (6) OPEN 1.55 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The sp...