PSS9014C

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Sep 20 2004 Aug 10 Philips Semiconductors Product specification NPN general purpose transistor FEATURES High power dissipation: 500 mW Low collector capacitance Low collector-emitter saturation voltage High current capability. APPLICATIONS General purpose switching and amplification. 1 handbook, halfpage PSS9014C PINNING PIN 1 2 3 collector base emitter DESCRIPTION DESCRIPTION NPN low VCEsat transistor in a SOT54 (TO-92) plastic package. 2 3 1 2 3 MAM279 MARKING TYPE NUMBER PSS9014C MARKING CODE S9014C Fig.1 Simplified outline (SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 50 45 5 100 200 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 2004 Aug 10 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a ...