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PSMN009-100W

N-channel TrenchMOS transistor

Description

Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN009-100W FEATURES ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effec...

Philips

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