Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
PSMA8.5A to PSMA78A Transient voltage suppressor diodes
Product specification Supersedes data of 1998 Dec 04 1999 Jan 26
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • UL 94V-O classified plastic package • Transient suppressor stand-off voltage range: 8.5 to 78 V for 26 types • Supplied in 12 mm embossed tape.
handbook, 4 columns
PSMA8.5A to PSMA78A
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,, ,, ,,
k
cathode band a
Top view
Side view
MSA473
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation CONDITIONS 10/1000 µs exponential pulse; Tj = 25 °C prior to surge; see Figs.3 and 5 VALUE 400 W UNIT
1999 Jan 26
2
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF Tstg Tj PARAMETER forward voltage storage temperature junction temperature CONDITIONS IF = 0.5 A
PSMA8.5A to PSMA78A
MIN. − −65 −65
MAX. 1.2 +175 +175 V °C °C
UNIT
Per type Tj = 25 °C unless otherwise specified. REVERSE VOLTAGE (max) @ IRSM (CLAMPING VOLTAGE) VRSM (V) 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 REVERSE SURGE CURRENT (max) REVERSE LEAKAGE CURRENT (max) @ VRWM
REVERSE STAND-OFF VOLTAGE DEVICE (note 1) VRWM (V) PSMA8.5A PSMA9.0A PSMA10A PSMA11A PSMA12A PSMA13A PSMA14A PSMA15A PSMA16A PSMA17A PSMA18A PSMA20A PSMA22A PSMA24A PSMA26A PSMA28A PSMA30A PSMA33A 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33
BREAKDOWN VOLTAGE
VBR min. (V) 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7
IT (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
IRSM (A) 27.8 26.0 23.5 22.0 20.1 18.6 17.2 16.4 15.4 14.5 13.7 12.3 11.3 10.3 9.5 8.8 8.3 7.5
IR (µA) 5.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
1999 Jan 26
3
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
PSMA8.5A to PSMA78A
REVERSE STAND-OFF VOLTAGE DEVICE (note 1) VRWM (V) PSMA36A PSMA40A PSMA43A PSMA45A PSMA48A PSMA51A PSMA54A PSMA58A PSMA60A PSMA64A PSMA70A PSMA75A PSMA78A Note 36 40 43 45 48 51 54 58 60 64 70 75 78
BREAKDOWN VOLTAGE
REVERSE VOLTAGE (max) @ IRSM (CLAMPING VOLTAGE) VRSM (V) 58.1 64.5 69.4 72.2 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0
REVERSE SURGE CURRENT (max)
REVERSE LEAKAGE CURRENT (max) @ VRWM
VBR min. (V) 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7
IT (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1
IRSM (A) 6.9 6.2 5.8 5.5 5.2 4.9 4.6 4.3 4.1 3.9 3.5 3.3 3.2
IR (µA) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
1. Tolerance and Voltage Designation: Tolerance designation - The type number listed indicates a tolerance of ±.5% THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.4. 2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4. For more information please refer to the ‘General part of the associated handbook’. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W
1999 Jan 26
4
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
GRAPHICAL DATA
PSMA8.5A to PSMA78A
handbook, halfpage
4
MGR463
104 handbook, halfpage
MGR465
Ptot (W) 3 PRSM (W)
2
103
1
0 0 100 T (°C) 200
102 10−2
10−1
1
t2 (ms)
10
Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted on an Al2O3 printed-circuit board as shown in Fig.4.
Tj = 25 °C prior to surge.
Fig.3 Fig.2 Maximum total power dissipation as a function of temperature.
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (exponential pulse).
50
IRSM handbook, halfpage (%) 100 90
4.5 50 2.5
50
10 1.25
MSB213
t t1 t2 In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t2 = 1000 µs.
MGD521
Dimensions in mm.
Fig.5 Fig.4 Printed-circuit board for surface mounting.
Non-repetitive peak reverse current pulse definition.
1999 Jan 26
5
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
PACKAGE OUTLINE
PSMA8.5A to PSMA78A
Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors
SOD106
H D
A A1 c Q
E
b
(1)
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D.