Document
RFP45N02L, RF1S45N02L, RF1S45N02LSM
May 1997
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49243.
Features
• 45A, 20V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature
Ordering Information
PART NUMBER RFP45N02L RF1S45N02L RF1S45N02LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N02L F45N02L
Symbol
D
G
F45N02L
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
A
JEDEC TO-263AB
M
A
A
DRAIN (FLANGE) GATE SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
File Number
4342
1
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings
TC = 25oC Unless Otherwise Specified RFP45N02L, RF1S45N02L, RF1S45N02LSM Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 20 20 ±10 45 Refer to Peak Current Curve Refer to UIS Curve 90 0.606 -55 to 175 260 W W/oC
oC oC
UNITS V V V A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA VDS = 20V, VGS = 0V VGS = ±10V ID = 45A, VGS = 5V VDD = 15V, ID ≅ 45A, RL = 0.33Ω, VGS = 5V, RGS = 5Ω TC = 25oC TC = 150oC MIN 20 1 VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 15V, VGS = 0V, f = 1MHz VDD = 16V, ID ≅ 45A, RL = 0.35Ω TYP 15 160 20 20 50 30 1.5 1300 724 250 MAX 2 1 50 ±100 0.022 260 60 60 36 1.8 1.65 80 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RθJC RθJA
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 45A ISD = 45A, dISD/dt = 100A/µs MIN TYP MAX 1.5 125 UNITS V ns
2
RFP45N02L, RF1S45N02L, RF1S45N02LSM Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 0 25 ID, DRAIN CURRENT (A) 50
40
30
20
10
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 ZθJC, NORMALIZED THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 .05 .02 .01 SINGLE PULSE 0.01 10-5 t1 t2 NOTES: DUTY FAC.