P3056LS

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3056LS TO-263 D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±12 12 8 45 60 3 43 15 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM A L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 2.6 60 UNITS °C / W 0.6 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±12V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 0.5 0.7 1.0 ±250 nA 25 250 µA V LIMITS UNIT MIN TYP MAX 1 AUG-09-2001 NIKO-SEM 1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) 1 P3056LS TO-263 On-State Drain Current Drain-Source On-State 1 ...