P1086

P1086 P1086 P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88. TO-92 D S G Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value - 30 30 50 -55 ~ +150 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol BVGSS IGSS ID(off) IDGO IDSS VGS(off) VDS(on) rDS(on) rds(on) Ciss Crss td(on) tr td(off) tf Parameter Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Drain-Gate Leakage Current Zero-Gate Voltage Drain Current Gate-Source Cutoff Voltage Drain-Source On Voltage Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Time Rise Time Trun Off Time Fall Time Test Condition VDS = 0V, IG = 1µA VGS = 15V VDS = 15V VGS = 12V VDG = 15V IS = 0 T = +85°C T = +85°C 10 10 0.5 75 75 45 10 15 20 15 50 Min. 30 Typ. Max. 2 10 0.5 2 0.1 Units V nA nA µA NA µA mA V V Ω Ω pF pF ns ns ns ns VDS = 20...