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OPE5794 Dataheets PDF



Part Number OPE5794
Manufacturers ETC
Logo ETC
Description GaAlAs Infrared Emitter
Datasheet OPE5794 DatasheetOPE5794 Datasheet (PDF)

GaAlAs Infrared Emitter OPE5794 The OPE5794 is GaAlAs infrared emitting diode that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 plastic package and has medium beam angle with lensed package and cup frame DIMENSIONS (Unit:mm) 3.0 3.8 4.6 0.3 5.4 0.8 Max FEATURES • High-output power • Medium beam angle • Availa.

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GaAlAs Infrared Emitter OPE5794 The OPE5794 is GaAlAs infrared emitting diode that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 plastic package and has medium beam angle with lensed package and cup frame DIMENSIONS (Unit:mm) 3.0 3.8 4.6 0.3 5.4 0.8 Max FEATURES • High-output power • Medium beam angle • Available for pulse operating 23.0 Min 2-¡à 0.5 ¨ç ¨è 2.0 2.5 APPLICATIONS ¨è Cathode • Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS Item Symbol Rating Power dissipation PD 80 Forward current IF 60 Pulse forward current IFP 0.8 1 Reverse voltage VR 5.0 Operating temp. Topr. -20~ +70 Storage temp. Tstg. -20~ +80 * 2 Tsol. 240. Soldering temp. *1 .Duty ratio = 1/100, pulse width=0.12ms. *2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle ¥Äè ¥Äë ¥ë Symbol VF IR Ct Ie p ¨ç Anode (Ta=25°C ) Unit mW mA A V °C °C °C (Ta=25°C) Conditions IF =40mA VR= 5V f = 1MHz IF=40mA IF= 40mA IF= 40mA IF=40mA 20 20 940 45 ±17 Min. Typ. 1.2 Max. 1.5 10 Unit V µA pF mW/§ä nm nm deg. GaAlAs Infrared Emitter z FORWARD CURRENT Vs. AMBIENT TEMP. z 40 20 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 20 40 60 80 Ambient Temperature Ta(¡É ) 100 OPE5794 RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25¡ É Ta=25 100 80 60 40 20 0 -20 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) z RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA z 1.0 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25¡É 0.8 0.6 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 0.4 0.2 0.0 800 Ambient Temperature Ta(¡É z 100 Ta=25¡É 50 30 20 10 5 4 3 2 1 0.8 0.9 1.0 1.1 1.2 Forward Voltage VF(V) ) z 850 900 950 1000 1050 Emission Wavelength ¥ë (nm) FORWARD CURRENT Vs. FORWARD VOLTAGE ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25¡É -20° -10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 -30° -40° -50° -60° -70° -80° -90° 1.0 1.3 1.4 0.5 0 0.5 Relative Radiant intensity .


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