NZT7053

2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C B TO-92 E C B E C TO-226 B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 100 100 12 1.5 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200 Max 2N7053 1,000 8.0 125 50 *NZT7053 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ã 1997 Fairchild Semiconductor Corporation 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Electrical Charac...