D45H8 / NZT45H8 — PNP Power Amplifier
April 2015
D45H8 / NZT45H8 PNP Power Amplifier
Description
This device is desig...
D45H8 / NZT45H8 —
PNP Power Amplifier
April 2015
D45H8 / NZT45H8
PNP Power Amplifier
Description
This device is designed for power amplifier,
regulator, and switching circuits where speed is important. Sourced from process 5Q.
B CE
TO-220
Figure 1. D45H8 Device Package
Ordering Information
Part Number D45H8
NZT45H8
Marking D45H8 45H8
C
SOT-223
E C
B
Figure 2. NZT45H8 Device Package
Package TO-220 3L SOT-223 4L
Packing Method Rail
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO IC
TJ, TSTG
Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
-60
V
-8
A
-55 to +150
°C
Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2
www.fairchildsemi.com
D45H8 / NZT45H8 —
PNP Power Amplifier
Thermal Characteristics(3)
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