NZF220TT1

NZF220TT1 EMI Filter with ESD Protection Features: EMI/RFI Bi–directional “Pi” Low–Pass Filters ESD Protection Meets IEC61000–4–2 Diode Capacitance: 7 – 10 pF Zener/Resistor Line Capacitance: 22 ±20% pF Low Zener Diode Leakage: 1 mA Maximum Zener Breakdown Voltage; 6 – 8 Volts http://onsemi.com Benefits: Designed to suppress EMI/RFI Noise in Systems Subjected to Small Package Size Minimizes Parasitic Inductance, Thus a More “Ideal” Low Pass Filtering Response Typical Applications: Electromagnetic Interference SC–75 CASE 463 STYLE 4 MARKING DIAGRAM 3 Cellular Phones Communication Systems Computers Portable Products with Input/Output Conductors X6 D 1 2 MAXIMUM RATINGS Rating Peak Power Dissipation (Note 1) 8 × 20 ms Pulse Maximum Junction Temperature 1. All diodes under power 1 Symbol PPK TJ Value 14 150 Unit Watts °C X6 = Specific Device Code D = Date Code CIRCUIT DESCRIPTION 2 3 ORDERING INFORMATION Device NZF220TT1 Package SC–75 Shipping 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2002 1 May, 2002 – Rev. 2 Publication Order Number: NZF220TT1/D NZF220TT1 ELECTRICAL CHARACTERISTICS Symbol VZ Ir VF Capacitance Capacitance Resistor FC (Note 2) Characteristic Zener Breakdown Voltage, @ IZT = 1 mA Zener Leakage Current, @ VR = 3 V Zener Forward Voltage, @ IF = 50 mA Zener Internal Capacitance, @ 0 V Bias Zener/Resistor Array Line Capacitance Resistance Cutoff Frequency Min 6.0 N/A N/A 7.0 17.6 90 – Typ – – – – – – 220...