NUP2301MW6T1D

NUP2301MW6T1 Low Capacitance Diode Array for ESD Protection in Two Data Lines NUP2301MW6T1 is a MicroIntegration™ device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features http://onsemi.com PIN CONFIGURATION AND SCHEMATIC VN I/O 1 2 6 5 N/C I/O Low Capacitance (2.0 pf Maximum Between I/O Lines) Single Package Integration Design Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000-4-2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection VP 3 4 N/C 6 54 1 23 MARKING DIAGRAM Applications SC-88 CASE 419B STYLE 23 68d 68 = Specific Device Code d = Date Code O = Pin 1 Indicator ORDERING INFORMATION MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S 1. FR-5 = 1.0  0.75  0.062 in. Symb...