NTP52N10

NTP52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement Mode TO−220 Features Source−to−Drain Diode Recovery Time comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature http://onsemi.com Typical Applications PWM Motor Controls Power Supplies Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1.) Total Power Dissipation @ TA 25°C Derate above 25°C Operating and Storage Temperature Range Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 V, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 100 100 "20 "40 52 40 156 178 1.43 −55 to +150 800 Adc Unit Vdc Vdc Vdc 52 AMPERES 100 VOLTS 30 mΩ @ VGS = 10 V N−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 Watts W/°C °C mJ TO−220AB CASE 221A STYLE 5 1 NTP52N10 LLYWW 1 Gate 3 Source 2 Drain °C/W RθJC RθJA TL 0.7 62.5 260 °C 2 3 NTP52N10 LL Y WW 1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%. = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP52N10 Package TO−220AB Shippi...