NE38018

PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm ORDERING INFORMATION (PLAN) Part Number NE38018-T1 Quantity 3 kpcs/Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Drain) face to perforation side of the tape. NE38018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Source), Pin2 (Gate) face to perforation side of the tape. Remark Please contact with responsible NEC person, if you require evaluation sample. (Part number for sample order: NE38018) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Temperature Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 –3.0 IDSS 100 150 125 –65 to +125 Unit V V mA µA mA °C °C RECOMMENDED OPERATING CONDITIONS (TA = 25°C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 2 – TYP. 2 5 – MAX. 3 30 0 Unit V mA dBm The information in this document is subject to change without notice. Document No. P13494EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan © 1998 NE38018 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Gate to Source Leak ...