L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DATA SHEET
HJ-FET
NE34018
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
NE34018 is a n-channel HJ-FET ...
Description
DATA SHEET
HJ-FET
NE34018
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
NE34018 is a n-channel HJ-FET housed in MOLD package.
PACKAGE DIMENSIONS
in millimeters
FEATURES
x
Low noise figure NF = 0.6 dB TYP. at f = 2 GHz
2
2.1 ±0.2 1.25 ±0.1
(1.25) 0.60 0.65 +0.1 0.3 +0.1 –0.05 0.3 0.4 –0.05 0.3 +0.1 –0.05 0.15 +0.1 –0.05 0.3 +0.1 –0.05 (1.3) 4 0 to 0.1 3
x
High associated gain
2.0 ±0.2
Ga = 16 dB TYP. at f = 2 GHz
x x x
V63
Gate width: Wg = 400 Pm 4 pins super mini mold Tape & reel packaging only available
ORDERING INFORMATION
PART NUMBER
QUANTITY 3 Kpcs/Reel.
PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Source), Pin 2 (Gate) face to perforation side of the tape.
NE34018-T1
0.9 ±0.1
NE34018-T2
3 Kpcs/Reel.
* Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part number for sample order: NE34018)
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage Gate to Source Voltage Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 ð3.0 IDSS 150 125 ð65 to +125 V V mA mW qC qC
Document No. P11618EJ3V0DS00 (3rd edition) Date Published September 1997 N Printed in Japan
1
PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain
©
1996
NE34018
RECOMMENDED OPERATING CONDITION (TA = 25 qC)
CHARACTERISTIC Drain to Source Voltage Drain Cur...
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