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NDT2955 Dataheets PDF



Part Number NDT2955
Manufacturers Fairchild
Logo Fairchild
Description P-Channel MOSFET
Datasheet NDT2955 DatasheetNDT2955 Datasheet (PDF)

September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor cont.

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September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. Features -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted NDT2955 -60 ±20 (Note 1a) Units V V A -2.5 -15 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT2955 Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -60 V, VGS = 0 V TJ = 125 C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V o -60 -10 -100 100 -100 V µA µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA TJ = 125 C RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.5 A TJ = 125oC VGS = -4.5 V, ID = -2 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current Forward Transconductance VGS = -10 V, VDS = -5 V VDS = -10 V, ID = -2.5 A VDS = -25 V, VGS = 0 V, f = 1.0 MHz -12 3.5 o -2 -0.8 -2.4 -2 0.21 0.3 0.36 -4 -2.6 0.3 0.45 0.5 V Ω A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 570 140 40 pF pF pF SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -30 V, ID = -2.5 A, VGS = -10 V VDD = -30 V, ID = -1 A, VGEN = -10 V, RGEN = 6 Ω 8 20 20 5 16 2 4 15 40 40 20 25 5 8 ns ns ns ns nC nC nC NDT2955 Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A (Note2) -2.3 -1.3 A V PD (t ) = R θJ A (t ) T J −TA = R θJ C +RθCA(t ) T J −TA = I2 D (t ) × RDS (ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT2955 Rev. B2 Typical Electrical Characteristics -12 3 V I D , DRAIN-SOURCE CURRENT (A) GS = -10V -8.0 -7.0 DRAIN-SOURCE ON-RESISTANCE V -6.0 -5.5 R DS(on), NORMALIZED 2.5 GS = -4.0V -4.5 -5.0 -5.5 -9 2 -6 -5.0 -6.0 1.5 -4.5 -3 -7.0 -8.0 1 -4.0 -3.5 0 0 -1 -2 -3 -4 VDS , DRAIN-SOURCE VOLTAGE (V) -5 -6 -10 0.5 0 -3 -6 -9 ID , DRAIN CURRENT (A) -12 -15 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 3 DRAIN-SOURCE ON-RESISTANCE I D = -2.5A V GS = -10V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 V GS = -10 V R DS(ON), NORMALIZED 2 1.2 TJ = 125°C 1 25°C 1 -55°C 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150 0 0 -3 I D -6 -9 -12 -15 , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. -10 1.2 25°C GATE-SOURCE THRESHOLD VOLTAGE (V) V DS = -10V -8 ID , DRAIN CURRENT (A) T = -55°C J 125°C 1.1 V DS = V GS I D = -250µA -6 V th, NORMALIZED 1 -4 0.9 -2 0.8 0 -2 -3 V GS -4 -5 -6 , GATE TO SOURCE VOLTAGE (V) -7 0.7 -50 -25 0 25 50 75 100 T J , JU.


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