Document
NDS9933A
January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.
Features •
-2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V.
• High density cell design for extremely low RDS(on). • High power and current handling capability in a
widely used surface mount package.
• Dual MOSFET in surface mount package.
D2 D1 D1
D2
5 6 4 3 2 1
G1 SO-8 S1 G1 S2
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
NDS9933A
-20
(Note 1a)
Units
V V A W
±8 -2.8 -10 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 °C
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
NDS9933A
©1999 Fairchild Semiconductor Corporation
Device
NDS9933A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A
NDS9933A
Electrical Characteristics
Symbol
BVDSS BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min Typ Max Units
-20 -25 -1 100 -100 V mV/°C µA nA nA
Off Characteristics
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -2.8 A VGS = -4.5 V, ID = -2.8A,TJ=125°C VGS = -2.7 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A
-0.4
-0.65 4 0.10 5 0.15 0 0.13 5 0.14 0
-1
V mV/°C
0.140 0.240 0.190 0.200
Ω
ID(on) gFS
On-State Drain Current Forward Transconductance
VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -2.8 A
-10 6.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
405 170 45
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω
6.5 20 31 21
13 35 50 35 8.5
ns ns ns ns nC nC nC
VDS = -5 V, ID = -2.8 A, VGS = -4.5 V,
6 0.8 1.3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-1.3 -0.78 -1.2
A V
Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
a. 78 C/W on a 0.5 in pad of 2oz copper.
O
2
b. 125 C/W on a 0.02 in pad of 2oz copper.
O
2
c. 135OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NDS9933A Rev. A
NDS9933A
Typical Characteristics
15 -ID , DRAIN-SOURCE CURRENT (A)
-2.7 -2.5
RDS(ON) , NORMALIZED
12
-4.0
-3.0
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-3.5
2 1.8
VGS = -2.0V
1.6 1.4 1.2 1 0.8
9
-2.5 -2.7 -3.0 -3.5 -4.0 -4.5
6
-2.0
3
-1.5
0 0 1 2 3 4 5 -V DS , DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
-I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.5
1.6 DRAIN-SOURCE ON-RESISTANCE
1.4
V GS = -4.5V
R DS(ON) ,ON-RESISTANCE(OHM)
I D = -2.8A
I D = -1.4A
0.4
RDS(ON) , NORMALIZED
1.2
0.3
1
0.2
TJ = 125°C 25°C
0.8
0.1
0.6 -50
-25
0
25
50
75
100
125
150
0 1 2 3 4 5 -VGS ,GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with Temperature.
10
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
VDS = -5V
-I D , DRAIN CURRENT (A) 8
TA = -55°C 25°C 125°C
-I S , REVERSE DRAIN CURRENT (A)
VGS = 0V
1
TJ = 125°C
0.1
6
25°C .