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NDS9933A Dataheets PDF



Part Number NDS9933A
Manufacturers Fairchild
Logo Fairchild
Description Dual P-Channel MOSFET
Datasheet NDS9933A DatasheetNDS9933A Datasheet (PDF)

NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where .

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NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed. Features • -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V. • High density cell design for extremely low RDS(on). • High power and current handling capability in a widely used surface mount package. • Dual MOSFET in surface mount package. D2 D1 D1 D2 5 6 4 3 2 1 G1 SO-8 S1 G1 S2 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter NDS9933A -20 (Note 1a) Units V V A W ±8 -2.8 -10 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Outlines and Ordering Information Device Marking NDS9933A ©1999 Fairchild Semiconductor Corporation Device NDS9933A Reel Size 13’’ Tape Width 12mm Quantity 2500 units NDS9933A Rev. A NDS9933A Electrical Characteristics Symbol BVDSS BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min Typ Max Units -20 -25 -1 100 -100 V mV/°C µA nA nA Off Characteristics On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V, ID = -2.8 A VGS = -4.5 V, ID = -2.8A,TJ=125°C VGS = -2.7 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A -0.4 -0.65 4 0.10 5 0.15 0 0.13 5 0.14 0 -1 V mV/°C 0.140 0.240 0.190 0.200 Ω ID(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -2.8 A -10 6.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 405 170 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 6.5 20 31 21 13 35 50 35 8.5 ns ns ns ns nC nC nC VDS = -5 V, ID = -2.8 A, VGS = -4.5 V, 6 0.8 1.3 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -1.3 -0.78 -1.2 A V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a. 78 C/W on a 0.5 in pad of 2oz copper. O 2 b. 125 C/W on a 0.02 in pad of 2oz copper. O 2 c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NDS9933A Rev. A NDS9933A Typical Characteristics 15 -ID , DRAIN-SOURCE CURRENT (A) -2.7 -2.5 RDS(ON) , NORMALIZED 12 -4.0 -3.0 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5 2 1.8 VGS = -2.0V 1.6 1.4 1.2 1 0.8 9 -2.5 -2.7 -3.0 -3.5 -4.0 -4.5 6 -2.0 3 -1.5 0 0 1 2 3 4 5 -V DS , DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 -I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.6 DRAIN-SOURCE ON-RESISTANCE 1.4 V GS = -4.5V R DS(ON) ,ON-RESISTANCE(OHM) I D = -2.8A I D = -1.4A 0.4 RDS(ON) , NORMALIZED 1.2 0.3 1 0.2 TJ = 125°C 25°C 0.8 0.1 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 -VGS ,GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. 10 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VDS = -5V -I D , DRAIN CURRENT (A) 8 TA = -55°C 25°C 125°C -I S , REVERSE DRAIN CURRENT (A) VGS = 0V 1 TJ = 125°C 0.1 6 25°C .


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