May 1998
NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancemen...
May 1998
NDS9925A Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
S ND 5A 2 99
S2 G2
5 6 7 8
4 3 2 1
SO-8
pin 1
S1
G1
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
NDS9925A
Units
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1a)
20 ±8 4.5 15 2
(Note 1a) (Note 1b) (Note 1c)
V V A
PD
Power Dissipation for Dual Operation Power Dissipation for Single Operation
W
1.6 1 0.9 -55 to 150 °C
TJ,TSTG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA RθJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, ...