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NDP610A Dataheets PDF



Part Number NDP610A
Manufacturers Fairchild
Logo Fairchild
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet NDP610A DatasheetNDP610A Datasheet (PDF)

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutat.

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May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP610A NDP610AE NDB610A NDB610AE 100 100 ±20 ±40 26 104 100 0.67 NDP610B NDP610BE NDB610B NDB610BE Units V V V V 24 96 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP610.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 26 A Type NDP610AE NDP610BE NDB610AE NDB610BE Min Typ Max 250 26 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 13 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP610A NDP610AE NDB610A TJ = 125°C NDB610AE NDP610B NDP610BE NDB610B TJ = 125°C NDB610BE NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 13 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 26 2 1.4 3 2.3 0.048 0.086 100 250 1 100 -100 4 3.2 0.065 0.13 0.08 0.16 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 12 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 24 A 10 16 1430 280 85 1800 500 200 S pF pF pF Ciss Coss Crss NDP610.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 50 V, ID = 26 A, VGS = 10 V, RGEN = 7.5 Ω Type ALL ALL ALL ALL Min Typ 11 72 40 52 47 8 22 Max 20 120 65 85 65 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 80 V, ID = 26 A, VGS = 10V ALL ALL ALL NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 26 A 24 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE 104 A 96 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 13 A VGS = 0 V, IS = 26 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.88 0.83 108 7.4 1.3 1.2 155 11 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 °C/W °C/W Notes: 1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP610.SAM Typical Electrical Characteristics 70 2.5 V GS = 20V I D , DRAIN-SOURCE CURRENT (A) 60 50 40 30 20 10 0 0 12 10 8.0 7.0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 5V 6.0 2 7.0 8.0 10 1.5 12 20 6.0 1 5.0 2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V) 8 0.5 0 10 20 I D 30 40 50 , DRAIN CURRENT (A) 60 70 Figure 1. On-Region Characteristic.


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