Document
May 1994
NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL
TC = 25°C unless otherwise noted
NDP610A NDP610AE NDB610A NDB610AE 100 100 ±20 ±40 26 104 100 0.67
NDP610B NDP610BE NDB610B NDB610BE
Units V V V V
24 96
A A W W/°C °C °C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
© 1997 Fairchild Semiconductor Corporation
NDP610.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25°C unless otherwise noted)
Conditions VDD = 25 V, ID = 26 A
Type NDP610AE NDP610BE NDB610AE NDB610BE
Min
Typ
Max 250 26
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 13 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP610A NDP610AE NDB610A TJ = 125°C NDB610AE NDP610B NDP610BE NDB610B TJ = 125°C NDB610BE NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 13 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 26 2 1.4 3 2.3 0.048 0.086 100 250 1 100 -100 4 3.2 0.065 0.13 0.08 0.16 V µA mA nA nA V V Ω Ω Ω Ω A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 12 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
24
A
10
16 1430 280 85 1800 500 200
S pF pF pF
Ciss Coss Crss
NDP610.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25°C unless otherwise noted)
Conditions VDD = 50 V, ID = 26 A, VGS = 10 V, RGEN = 7.5 Ω
Type ALL ALL ALL ALL
Min
Typ 11 72 40 52 47 8 22
Max 20 120 65 85 65
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 80 V, ID = 26 A, VGS = 10V
ALL ALL ALL NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 26 A
24
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE
104
A
96
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 13 A VGS = 0 V, IS = 26 A, dIS/dt = 100 A/µs
ALL TJ = 125°C ALL ALL
0.88 0.83 108 7.4
1.3 1.2 155 11
V V ns A
trr Irr RθJC RθJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 °C/W °C/W
Notes: 1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP610.SAM
Typical Electrical Characteristics
70 2.5
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A) 60 50 40 30 20 10 0 0
12
10 8.0 7.0
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V GS = 5V 6.0
2
7.0 8.0 10
1.5
12 20
6.0
1
5.0
2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V)
8
0.5
0
10
20 I
D
30 40 50 , DRAIN CURRENT (A)
60
70
Figure 1. On-Region Characteristic.