Document
June 1997
NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
-30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
NDP6030PL -30 ±16 -30 -90 75 0.5 -65 to 175 275 -65 to 175
NDB6030PL
Units V V A
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C
W
TJ,TSTG TL TJ,TSTG RθJC RθJA
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Operating and Storage Temperature Range
°C °C °C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 °C/W °C/W
NDP6030PL Rev.B1
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25 C VDS = -24 V, VGS = 0 V TJ = 125°C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note)
o
-30 -36 -250 1 -100 -100
V mV/oC µA mA nA nA mV/oC -2 -1.6 0.042 0.075 0.025 A 20 S V
∆BVDSS/∆TJ
IDSS
VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V ID = -250 µA, Referenced to 25 o C VDS = VGS, ID= -250 µA TJ = 125°C VGS = -4.5 V, ID = -15 A TJ = 125°C VGS = -10 V, ID = -19 A -1 -0.8 2.2 -1.4 -1.08 0.037 0.053 0.021 -20
ON CHARACTERISTICS
∆VGS(th)/∆TJ
VGS(th) RDS(ON)
Gate Threshold Voltage Temp.Coefficient Gate Threshold Voltage
Static Drain-Source On-Resistance
Ω
ID(on) gFS
On-State Drain Current Forward Transconductance
VGS = -4.5 V, VDS = -5 V VDS = -4.5 V, ID = -19 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD trr Irr
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note)
1570 975 360
pF pF pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -15 V, ID = -5 A, VGS = -5 V, RGEN = 6 Ω
12.5 60 50 52
25 120 100 100 36
nS nS nS nS nC nC nC
VDS= -12 V ID = -30 A , VGS = -5 V
26 6.5 11.5
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = -15 A VGS = 0 V, IF = -30 A dIF/dt = 100 A/µs
(Note)
-30 -100 -0.92 58 -1.5 -1.3
A A V ns A
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6030PL Rev.B1
Typical Electrical Characteristics
-I D , DRAIN-SOURCE CURRENT (A) 60
DRAIN-SOURCE ON-RESISTANCE
V GS = -10V -7.0
1.6
R DS(ON) , NORMALIZED
-6.0 -5.0 -4.5 -4.0 -3.5 -3.0
1.4 1.2 1 0.8 0.6 0.4
V GS= -3.5 V -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -10
40
20
0
0
1
2
3
4
5
0
10
20
30
40
50
60
-VDS , DRAIN-SOURCE VOLTAGE (V)
-I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE (OHMS)
1.8
0.12 I D = -15A R DS(ON) , ON-RESISTANCE
T = 25°C
A
ID = -15A
125 °C
1.6 1.4 1.2 1 0.8 0.6 -50
V GS = -4.5V
0.1 0.08 0.06 0.04 0.02 0
R DS(ON), NORMALIZED
-25
0
25 50 75 100 125 T , JUNCTION TEMPERATURE (°C)
J
150
175
2
4
6
8
10
-VGS ,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On Resistance Variation with Gate-To- Source Voltage.
-IS , REVERSE DRAIN CURRENT (A)
30
60 10 1 0.1 0.01
VDS = -5V
-ID , DRAIN CURRENT (A) 25 20 15 10 5 0 1 -V 2
GS
T = -55°C A
VGS = 0V TJ = 125°C 25°C -55°C
25°C 125°C
3
4
5
0.0001 0.2
0.4 -V
SD
0.6
0.8
1
1.2
1.4
, GATE TO SOURCE VOLTAGE (V)
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperatur.