NDF0610

April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features -0.18 and -0.12A, -60V. RDS(ON) = 10Ω Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) TO-92 and SOT-23 packages for both through hole and surface mount applications High saturation current ____________________________________________________________________________________________ S D G S D G S SOT-23 NDS0610 G TO-92 NDF0610 D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDF0610 NDS0610 Units VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Maximum Power Dissipation TA = 25°C Derate above 25°C 0.8 5 -0.18 -60 -60 ±20 ±30 -0.12 -1 0.36 2.9 -55 to 150 300 V V V V A W mW/oC °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temp...