ND2012L

ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VGS(off) (V) –1.5 to –4 –0.5 to –2.5 ID (A) 0.16 0.132 Features D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-226AA (TO-92) S 1 G 2 D 3 Top View Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2012L 200 "30 0.16 0.1 0.8 0.8 0.32 156 ND2020L 200 "30 0.132 0.083 0.8 0.8 0.32 156 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range W _C/W _C –55 to 150 Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426—Rev. C, 14-Apr-97 1 ND2012L/...