MZ0912B50Y

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Input and output matching cell allows an easier design of circuits. APPLICATIONS Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. handbook, halfpage MZ0912B50Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION Class C; tp = 10 µs; δ = 1% f (GHz) VCC (V) PL (W) >50 Gp (dB) >7 ηC (%) >42 Zi/ZL (Ω) see Figs 6 and 7 0.960 to 1.215 50 PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 e 2 Top view MAM314 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product ...