Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)
Description
NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory (SRAM)
Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented s...
