NTE6090 Silicon Dual Power Rectifier
Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type pac...
NTE6090 Silicon Dual Power Rectifier
Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the
Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV) Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . . . . 30A Non–Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A Peak Repetitive Reverse C...
